It’s a model to describe large signal behaviour of a transistor, and start with the simple notion of two back to back diodes. For example the diodes seen at the two . It can be shown that (see S.M. Sze, Physics of Semiconductor Devices), therefore . where. More Complete Ebers-Moll Model. Model includes configurational. Ideal transistor model. Forward active mode of operation General bias modes of a bipolar transistor The Ebers-Moll model Saturation.

Author: Voodoojora Brajinn
Country: Turks & Caicos Islands
Language: English (Spanish)
Genre: Environment
Published (Last): 22 May 2005
Pages: 165
PDF File Size: 17.73 Mb
ePub File Size: 14.23 Mb
ISBN: 951-7-48622-863-8
Downloads: 76667
Price: Free* [*Free Regsitration Required]
Uploader: Ball

The emitter efficiency defined by equation 5. It is obvious that if one junction is forward biased then other junction will be reverse biased consider for example diode D1 is forward biased and diode D2 is reverse biased much like a NPN transistor in active region according to the junction voltages only current order of reverse saturation current flows through the series junctions.

This model of transistor is known as Ebers Moll model of transistor. Such recombination current will be discussed in section 5. The forward active mode is obtained by forward-biasing the base-emitter junction. The thin shared base and asymmetric collector—emitter doping are what differentiates a bipolar transistor from two separate and oppositely biased diodes connected in series. To further simplify this model, we will moel that all quasi-neutral regions molo the device are much smaller than the minority-carrier diffusion lengths in these regions, so that the “short” diode expressions apply.

The model can be quite accurate for low-frequency circuits and can easily be adapted for higher-frequency circuits with the addition of appropriate inter-electrode capacitances eberw other parasitic elements.

Both factors increase the collector or “output” current of the transistor in response to an increase in the collector—base voltage.

For a diode with voltage V applied between its terminals, the molll flowing through the junction in terms of applied voltage between its terminals is given by. In the discussion below, focus is on the NPN bipolar transistor.

In this “on” state, current flows from the collector to the emitter of the transistor.


The Bipolar Transistor (Ebers Moll Model)

Compact Models of Bipolar Junction Transistors, pp. Leave a Reply Cancel reply Your email address will not be published. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOS process of wafer fabrication to create circuits that take advantage of the application strengths of both types of transistor. As well, as the base is lightly doped in comparison to the emitter and collector regionsrecombination rates are low, permitting more carriers to diffuse across the base region.

In terms of junction biasing: This base transport factor can also be expressed in function of the diffusion length in the base:. This section’s use of external links may not follow Wikipedia’s policies or guidelines. The minority carrier lifetime in the base is 10 ns. Semiconductor Device Physics and Simulation.

This causes an additional delay before the transistor is turned off. This can be explained as follows: Ebers—Moll model for an NPN transistor. In the more traditional BJT, also referred to as homojunction BJT, the efficiency of carrier injection from the emitter to the base is primarily determined by the doping ratio between moddl emitter and base, which means the base must be lightly doped to obtain high injection efficiency, making its resistance relatively high.

Most transistors, however, have poor emitter efficiency under reverse active ebere since the collector doping density is typically much less than the base doping density to ensure high base-collector breakdown voltages.

Ebers-moll model of transistor

This ratio usually has a value close to unity; between 0. For this the h oe and h re parameters are neglected that is, they are set to infinity and zero, respectively. Assume there is no recombination in the depletion region. A cross-section view of a BJT indicates that the collector—base junction has a much larger area than the emitter—base junction.

These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.

Because base—emitter voltage varies as the logarithm of the base—emitter and collector—emitter currents, a BJT can also be used to compute logarithms and anti-logarithms.

Transistors can be thought of as two diodes P—N junctions sharing a common region that minority carriers can move through.


Bipolar Junction Transistors

The bipolar junction transistor, unlike other transistors, is usually not a symmetrical device. By convention, the direction of current on diagrams is shown as the direction that a positive charge would move.

The Base to emitter voltage and base to collector voltage in terms of currents can be derived as follows. Moll introduced their mathematical model of transistor currents: Holt, Reinhart, and Winston. For their operation, BJTs use two junctions between two semiconductor types, mol and p-type.

For high-frequency analyses the inter-electrode capacitances that are important at high frequencies must be added. Arrow according to schematic.

Bipolar junction transistor – Wikipedia

The BJT also makes a good amplifier, since it can multiply a weak input signal to about times its original strength. This allows thermally excited electrons to inject from the emitter into the base region. The minority-carrier distribution in the quasi-neutral regions of the bipolar transistor, as shown in Figure 5.

This section needs expansion. For DC conditions they are specified in upper-case. In this mode, the transistor has an emitter efficiency ebera base transport factor as described by equations 5.

That drift component of transport aids the normal diffusive transport, increasing the frequency response of the transistor by shortening the transit time across the base. Calculate the emitter efficiency, the base transport factor, and the current gain of the transistor biased in the forward active mode. From this equation, we conclude that the current gain can be larger than one if the emitter doping is much larger than the base doping.

This applied voltage causes the lower P-N junction to ‘turn on’, allowing a flow of electrons from the emitter into the base. Radiation causes a buildup of ‘defects’ in the base region that act as recombination centers.

The base internal current is mainly by diffusion see Fick’s law and. The collector diode is reverse-biased so I CD is virtually zero.