IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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This device is suitable.

Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Thermal Resistance Symbol Parameter Typ. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Bryce Goodman 1 years ago Views: Maximum Drain Current vs.

N-channel 60V – 0. Repetitive rating; pulse width limited dstasheet maximum junction temperature see fig. C Soldering Temperature, for 10 seconds 1. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein.

A, 4Dec 6 Document Number: Product names and markings noted herein may be trademarks of their datzsheet owners. A, 4Dec 4 Document Number: No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

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N-channel 80 V, 0. Typical Gate Charge vs. General Features Figure 1. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.

Typical Output Characteristics Fig. To the maximum extent permitted dtasheet applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.

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IRF9Z30 MOSFET P-CH 50V 18A TOAB Vishay IR datasheet pdf data sheet FREE from

They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Switching Time Dstasheet Circuit Fig.

Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Q g typical nc 27 A.

Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. Data Sheet June File Number Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.


Description N-channel 60 V, 0. Order code Marking Packages Packaging. To use this website, you must agree to our Privacy Policyincluding cookie policy. Order code Marking Package Packing. To make this website work, we log user data and share it with processors. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. R DS on max. Vishay makes no warranty, representation or guarantee regarding the suitability of the products datashedt any particular purpose or the continuing production of any product.

A, 4Dec Document Number: N-channel 60 V, 0. Except as expressly indicated in writing, Vishay products are not designed dattasheet use in medical, lifesaving, or lifesustaining applications or for any other application datasheft which the failure of the Vishay product could datasueet in personal injury or death. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.

(PDF) IRF9Z30 Datasheet download

High Performance Schottky Rectifier, 3. The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness.

Storage Temperature Range Soldering Temperature, for 10 seconds 1. Typical Transfer Characteristics Fig.