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Projeto de uma unidade de disco flexivel Orientador: Engenharias, Setores de atividade: III-V Semiconductor materials in nanoelectronics.
Silicon On Insulator Technology and Devices. Metodologia de Projeto de Asics. IV Brazilian Microelectronics School. II Brazilian Microelectronic School. New method for self-heating estimation using only DC measurements. The influence of elstronica proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors.
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Journal of Integrated Circuits and Systems Ed. Applied Physics Lettersv. Low-frequency noise investigation of n-channel 3D devices. Microelectronic Engineeringv. Journal of Low Power Electronics and Applicationsv. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism.
Threshold voltage extraction in Tunnel FETs. Measurement Setup, Numerical and Empirical Results. Microelectronics and Reliabilityv. Stress engineering and proton radiation influence on automotivw leakage current in triple-gate SOI devices. Journal of the Electrochemical Societyv.
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate automotova.
Temperature impact on the tunnel fet off-state current components. Harmonic distortion of unstrained and strained FinFETs operating in saturation.
Transactions on Electron Devicesv. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Cryogenic operation of FinFETs aiming at analog applications. Cryogenics Guildfordv.
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SBMicro proceedings, Analysis of the transistor efficiency of gas phase Zn diffusion In 0. New method for observing self-heating effect using transistor efficiency signature. Experimental analysis of differential pairs designed with line tunnel FET devices.
Simple method for detection of the self-heating signature. Influence of the Ge amount at source on transistor efficiency of vertical gate all around TFET for different conduction regimes.
Influence of proton radiation and strain on nFinFET zero temperature coefficient. Investigation of GIDL and gate leakage currents.
Influence of source-drain engineering and temperature on split-capacitance characteristics of FDSOI p-i-n gated diodes. The smaller the noisier?
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Low frequency noise diagnostics of advanced semiconductor devices. Effects of substrate orientation and strain. Impact of diameter on TFET conduction mechanisms. Transconductance hump in vertical gate-all-around tunnel-FETs. S3S,Millbrae, California. Graphene for advanced devices applications. From mosfet to Tunnel-Fet analog performance perspective. Semiconductor-On-Insulator materials, devices and circuits: Proceedings of Semiconductor-On-Insulator materials, devices and circuits: Proceedings of SBMicro SBMicro – Conference Proceedings, S3S,Monterey, California.
Galeti, M ; Rodrigues, M. Analog Performance embarcsda room and low temperature of triple-gate devices: Nicoletti, Talitha automotica Santos, Sara D. College Park, MD, EuroSOI – Sixth workshop of the thematic network on silicon on insulator technology, devices and circuits,Grenoble, France.
Impact of Fin Width and Channel Separation. Impact of the TiN metal gate thickness in gate induced floating body effect. AIP Conference Proceedings, Influence of fin width embarrcada channel length on the performance of buffers implemented with standard and strained triple-gate nFinFETs. Fin width influence on the harmonic distortion of standard and strained FinFETs operating in saturation. Halo Optimization for 0. Proceedings of 8th, Silicon-On-Insulator Technology and Devices European Space Agency Publications Division, Influence of non-vertical sidewall on FinFET threshold voltage.